N-channel Power MOSFET featuring 800V drain-source breakdown voltage and 2.5A continuous drain current. This device offers a typical Rds(on) of 2.8 Ohms and a maximum of 3.5 Ohms, with a maximum power dissipation of 60W. Designed for through-hole mounting in an IPAK package (TO-251-3), it operates within a temperature range of -55°C to 150°C and boasts fast switching characteristics with turn-on delay of 8.5ns and fall time of 25ns. The component is RoHS compliant and lead-free.
PackageTO-251-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STU3N80K5 technical specifications.
General
Package/Case
TO-251-3
Continuous Drain Current (ID)
2.5A
Drain to Source Breakdown Voltage
800V
Drain to Source Resistance
3.5R
Drain to Source Voltage (Vdss)
800V
Fall Time
25ns
Gate to Source Voltage (Vgs)
30V
Height
6.2mm
Input Capacitance
130pF
Lead Free
Lead Free
Length
6.6mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
60W
Mount
Through Hole
Number of Channels
1
Package Quantity
75
Packaging
Rail/Tube
Polarity
N-CHANNEL
Rds On Max
3.5R
RoHS Compliant
Yes
Series
SuperMESH5™
Turn-Off Delay Time
20.5ns
Turn-On Delay Time
8.5ns
Weight
0.139332oz
Width
2.4mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STU3N80K5 Datasheet
Download the complete datasheet for Stmicroelectronics STU3N80K5 to view detailed technical specifications.
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