N-channel Power MOSFET featuring 800V drain-source breakdown voltage and 2.5A continuous drain current. This device offers a typical Rds(on) of 2.8 Ohms and a maximum of 3.5 Ohms, with a maximum power dissipation of 60W. Designed for through-hole mounting in an IPAK package (TO-251-3), it operates within a temperature range of -55°C to 150°C and boasts fast switching characteristics with turn-on delay of 8.5ns and fall time of 25ns. The component is RoHS compliant and lead-free.
Stmicroelectronics STU3N80K5 technical specifications.
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