N-channel SuperMESH3™ Power MOSFET featuring 525V drain-source breakdown voltage and 2.5A continuous drain current. This through-hole component offers a low 2.1 Ohm typical drain-source resistance and 45W power dissipation. Designed for efficient switching, it exhibits 8ns turn-on delay and 14ns fall time. Packaged in TO-220, this RoHS compliant MOSFET operates from -55°C to 150°C.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power45W
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Technical Specifications
Stmicroelectronics STU4N52K3 technical specifications.
General
Package/Case
TO-220
Continuous Drain Current (ID)
2.5A
Drain to Source Breakdown Voltage
525V
Drain to Source Resistance
2.6R
Drain to Source Voltage (Vdss)
525V
Fall Time
14ns
Gate to Source Voltage (Vgs)
30V
Height
15.75mm
Input Capacitance
334pF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
45W
Mount
Through Hole
Package Quantity
75
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
45W
Radiation Hardening
No
Rds On Max
2.6R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
SuperMESH3™
Threshold Voltage
3.75V
Turn-Off Delay Time
21ns
Turn-On Delay Time
8ns
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STU4N52K3 Datasheet
Download the complete datasheet for Stmicroelectronics STU4N52K3 to view detailed technical specifications.
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