N-channel power MOSFET featuring 30V drain-source breakdown voltage and 48A continuous drain current. This device offers a low 7.6mΩ typical drain-source on-resistance and 60W maximum power dissipation. Designed with a fast switching speed, exhibiting a 6ns turn-on delay and 4.2ns fall time, it operates across a wide temperature range from -55°C to 175°C. The MOSFET is housed in a TO-251-3 IPAK package for through-hole mounting and is RoHS compliant.
PackageTO-251-3
MountingThrough Hole
PolarityN-CHANNEL
Power60W
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Technical Specifications
Stmicroelectronics STU60N3LH5 technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 48A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 8.4mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 4.2ns |
| Gate to Source Voltage (Vgs) | 22V |
| Height | 6.9mm |
| Input Capacitance | 1.62nF |
| Length | 6.6mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 60W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 60W |
| Radiation Hardening | No |
| Rds On Max | 8.4mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | STripFET™ V |
| Threshold Voltage | 1.8V |
| Turn-Off Delay Time | 19ns |
| Turn-On Delay Time | 6ns |
| Width | 2.4mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STU60N3LH5 Datasheet
Download the complete datasheet for Stmicroelectronics STU60N3LH5 to view detailed technical specifications.
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