Stmicroelectronics
STU60N55F3
80A, 55V, 0.0085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, ROHS COMPLIANT, IPAK-3
PackageTO-251-3
MountingThrough Hole
PolarityN-CHANNEL
Power110W
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Technical Specifications
Stmicroelectronics STU60N55F3 technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Resistance | 8.5mR |
| Drain to Source Voltage (Vdss) | 55V |
| Fall Time | 11.5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.2nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 110W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 110W |
| Radiation Hardening | No |
| Rds On Max | 8.5mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | STripFET™ III |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 35ns |
| Turn-On Delay Time | 20ns |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STU60N55F3 Datasheet
Download the complete datasheet for Stmicroelectronics STU60N55F3 to view detailed technical specifications.
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