Stmicroelectronics
STU6NF10
N-channel 100 V, 0.22 Ω, 6 A, DPAK, IPAK low gate charge STripFET͐2;2; Power MOSFET
PackageTO-251-3
MountingThrough Hole
PolarityN-CHANNEL
Power30W
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Technical Specifications
Stmicroelectronics STU6NF10 technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 6A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 250mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 3ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 280pF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 30W |
| Mount | Through Hole |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 30W |
| Radiation Hardening | No |
| Rds On Max | 250mR |
| RoHS Compliant | Yes |
| Series | STripFET™ |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 6ns |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STU6NF10 Datasheet
Download the complete datasheet for Stmicroelectronics STU6NF10 to view detailed technical specifications.
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