N-channel MOSFET with 40V drain-source breakdown voltage and 80A continuous drain current. Features low 5.5mR drain-source on-resistance and 70W maximum power dissipation. Packaged in a TO-251-3 (IPAK) through-hole mount, this RoHS compliant component operates from -55°C to 175°C. Ideal for power switching applications requiring high current handling and fast switching speeds, with typical turn-on delay of 10.5ns and fall time of 11.9ns.
PackageTO-251-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STU80N4F6 technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 5.5mR |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 11.9ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 6.2mm |
| Input Capacitance | 2.15nF |
| Lead Free | Lead Free |
| Length | 6.6mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 70W |
| Mount | Through Hole |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 6.3mR |
| RoHS Compliant | Yes |
| Series | STripFET™ VI, DeepGATE™ |
| Turn-Off Delay Time | 46.1ns |
| Turn-On Delay Time | 10.5ns |
| Width | 2.4mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STU80N4F6 Datasheet
Download the complete datasheet for Stmicroelectronics STU80N4F6 to view detailed technical specifications.
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