N-Channel Power MOSFET featuring 25V drain-source breakdown voltage and 80A continuous drain current. This through-hole component offers a low 4.9mΩ drain-source on-resistance and 70W power dissipation. Designed for high-efficiency switching, it operates across a wide temperature range of -55°C to 175°C. The TO-251 package ensures compact integration for demanding applications.
PackageTO-251
MountingThrough Hole
PolarityN-CHANNEL
Power70W
Quick Jump:
Technical Specifications
Stmicroelectronics STU95N2LH5 technical specifications.
General
| Package/Case | TO-251 |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Breakdown Voltage | 25V |
| Drain to Source Resistance | 4.9mR |
| Drain to Source Voltage (Vdss) | 25V |
| Fall Time | 7ns |
| Gate to Source Voltage (Vgs) | 22V |
| Height | 6.9mm |
| Input Capacitance | 1.817nF |
| Length | 6.6mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 70W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 70W |
| Radiation Hardening | No |
| Rds On Max | 4.9mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | No |
| Series | STripFET™ V |
| Threshold Voltage | 1V |
| Turn-Off Delay Time | 22ns |
| Turn-On Delay Time | 7ns |
| Width | 2.4mm |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Stmicroelectronics STU95N2LH5 Datasheet
Download the complete datasheet for Stmicroelectronics STU95N2LH5 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
