N-channel power MOSFET featuring 55V drain-source breakdown voltage and a maximum continuous drain current of 200A. Offers a low drain-source on-resistance of 2.2mΩ at 1.5mΩ typical. Designed for surface mounting in a SOP-10 package, this RoHS compliant component operates within a temperature range of -55°C to 175°C with a maximum power dissipation of 300W. Key switching characteristics include a 25ns turn-on delay and 50ns fall time.
MountingSurface Mount
PolarityN-CHANNEL
Power300W
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Technical Specifications
Stmicroelectronics STV250N55F3 technical specifications.
General
| Continuous Drain Current (ID) | 200A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Resistance | 1.5mR |
| Drain to Source Voltage (Vdss) | 55V |
| Drain-source On Resistance-Max | 2.2MR |
| Fall Time | 50ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 6.8nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Radiation Hardening | No |
| Rds On Max | 2.2mR |
| RoHS Compliant | Yes |
| Series | STripFET™ III |
| Turn-Off Delay Time | 110ns |
| Turn-On Delay Time | 25ns |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STV250N55F3 Datasheet
Download the complete datasheet for Stmicroelectronics STV250N55F3 to view detailed technical specifications.
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