N-channel SuperMESH™ Power MOSFET featuring 600V drain-source breakdown voltage and 10A continuous drain current. This through-hole component offers a low 0.65 Ohm typical drain-source resistance and 156W maximum power dissipation. Designed for high-voltage applications, it operates within a temperature range of -55°C to 150°C and is housed in a TO-247 package. Key switching characteristics include a 20ns turn-on delay and 30ns fall time.
PackageTO-247
Current Rating10A
MountingThrough Hole
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Stmicroelectronics STW10NK60Z technical specifications.
General
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 10A |
| Current Rating | 10A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 750mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 20.15mm |
| Input Capacitance | 1.37nF |
| Length | 15.75mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 156W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 156W |
| Radiation Hardening | No |
| Rds On Max | 750mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | SuperMESH™ |
| Threshold Voltage | 3.75V |
| Turn-Off Delay Time | 55ns |
| Turn-On Delay Time | 20ns |
| DC Rated Voltage | 600V |
| Width | 5.15mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STW10NK60Z Datasheet
Download the complete datasheet for Stmicroelectronics STW10NK60Z to view detailed technical specifications.
No datasheet is available for this part.
Product Images
