N-channel SuperMESH™ Power MOSFET featuring 900V drain-source breakdown voltage and 9.2A continuous drain current. This component offers a low 0.82 Ohm typical drain-source resistance and is Zener-protected. Housed in a TO-247 package for through-hole mounting, it operates within a -55°C to 150°C temperature range and supports a maximum power dissipation of 200W. Key switching parameters include a 30ns turn-on delay and 50ns fall time.
PackageTO-247
MountingThrough Hole
PolarityN-CHANNEL
Power200W
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Technical Specifications
Stmicroelectronics STW11NK90Z technical specifications.
General
Package/Case
TO-247
Continuous Drain Current (ID)
9.2A
Drain to Source Breakdown Voltage
900V
Drain to Source Resistance
980mR
Drain to Source Voltage (Vdss)
900V
Fall Time
50ns
Gate to Source Voltage (Vgs)
30V
Height
20.15mm
Input Capacitance
3nF
Lead Free
Lead Free
Length
15.75mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
200W
Mount
Through Hole
Number of Elements
1
Package Quantity
30
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
200W
Radiation Hardening
No
Rds On Max
980mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
SuperMESH™
Threshold Voltage
3.75V
Turn-Off Delay Time
76ns
Turn-On Delay Time
30ns
Width
5.15mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STW11NK90Z Datasheet
Download the complete datasheet for Stmicroelectronics STW11NK90Z to view detailed technical specifications.
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