N-channel SuperMESH™ Power MOSFET featuring 900V drain-source breakdown voltage and 9.2A continuous drain current. This component offers a low 0.82 Ohm typical drain-source resistance and is Zener-protected. Housed in a TO-247 package for through-hole mounting, it operates within a -55°C to 150°C temperature range and supports a maximum power dissipation of 200W. Key switching parameters include a 30ns turn-on delay and 50ns fall time.
PackageTO-247
MountingThrough Hole
PolarityN-CHANNEL
Power200W
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Technical Specifications
Stmicroelectronics STW11NK90Z technical specifications.
General
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 9.2A |
| Drain to Source Breakdown Voltage | 900V |
| Drain to Source Resistance | 980mR |
| Drain to Source Voltage (Vdss) | 900V |
| Fall Time | 50ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 20.15mm |
| Input Capacitance | 3nF |
| Lead Free | Lead Free |
| Length | 15.75mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 200W |
| Radiation Hardening | No |
| Rds On Max | 980mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | SuperMESH™ |
| Threshold Voltage | 3.75V |
| Turn-Off Delay Time | 76ns |
| Turn-On Delay Time | 30ns |
| Width | 5.15mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STW11NK90Z Datasheet
Download the complete datasheet for Stmicroelectronics STW11NK90Z to view detailed technical specifications.
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