N-channel power MOSFET featuring 100V drain-source breakdown voltage and a low 9mΩ drain-source on-resistance. This device offers a continuous drain current of 110A and a maximum power dissipation of 312W, housed in a TO-247 package for through-hole mounting. Key performance characteristics include a 4V threshold voltage, 25ns turn-on delay, and 68ns fall time, operating within a temperature range of -55°C to 175°C. This RoHS compliant component is designed for high-power applications.
PackageTO-247
Current Rating120A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STW120NF10 technical specifications.
General
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 110A |
| Current Rating | 120A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 9mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 10.5mR |
| Fall Time | 68ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 20.15mm |
| Input Capacitance | 5.2nF |
| Lead Free | Lead Free |
| Length | 15.75mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 312W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 600 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 312W |
| Radiation Hardening | No |
| Rds On Max | 10.5mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | STripFET™ II |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 132ns |
| Turn-On Delay Time | 25ns |
| DC Rated Voltage | 100V |
| Width | 5.15mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STW120NF10 Datasheet
Download the complete datasheet for Stmicroelectronics STW120NF10 to view detailed technical specifications.
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