N-channel power MOSFET featuring 600V drain-source breakdown voltage and 10A continuous drain current. This through-hole component offers a low 410mΩ drain-source on-resistance and 90W maximum power dissipation. Designed for high-efficiency switching applications, it operates within a -55°C to 150°C temperature range and is housed in a TO-247-3 package. Key switching characteristics include a 15ns turn-on delay and 10ns fall time. This RoHS compliant device is supplied in a rail/tube package.
PackageTO-247-3
MountingThrough Hole
PolarityN-CHANNEL
Power90W
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Technical Specifications
Stmicroelectronics STW12NM60N technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 10A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 410mR |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 410mR |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 960pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 90W |
| Mount | Through Hole |
| Package Quantity | 600 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 90W |
| Radiation Hardening | No |
| Rds On Max | 410mR |
| RoHS Compliant | Yes |
| Series | MDmesh™ |
| Turn-Off Delay Time | 60ns |
| Turn-On Delay Time | 15ns |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STW12NM60N Datasheet
Download the complete datasheet for Stmicroelectronics STW12NM60N to view detailed technical specifications.
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