N-channel Power MOSFET, 600V drain-source breakdown voltage, 11A continuous drain current, and 380mΩ maximum drain-source resistance. Features include a 110W maximum power dissipation, 9.5ns fall time, 11ns turn-on delay, and 41ns turn-off delay. This through-hole component is housed in a TO-247 package and operates within a temperature range of -55°C to 150°C. RoHS compliant and lead-free.
PackageTO-247
MountingThrough Hole
PolarityN-CHANNEL
Power110W
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Technical Specifications
Stmicroelectronics STW13N60M2 technical specifications.
General
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 11A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 380mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 9.5ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 20.15mm |
| Input Capacitance | 580pF |
| Lead Free | Lead Free |
| Length | 15.75mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 110W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 110W |
| Rds On Max | 380mR |
| RoHS Compliant | Yes |
| Series | MDmesh™ II Plus |
| Turn-Off Delay Time | 41ns |
| Turn-On Delay Time | 11ns |
| Weight | 1.340411oz |
| Width | 5.75mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STW13N60M2 Datasheet
Download the complete datasheet for Stmicroelectronics STW13N60M2 to view detailed technical specifications.
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