N-channel Power MOSFET, 600V drain-source breakdown voltage, 11A continuous drain current, and 380mΩ maximum drain-source resistance. Features include a 110W maximum power dissipation, 9.5ns fall time, 11ns turn-on delay, and 41ns turn-off delay. This through-hole component is housed in a TO-247 package and operates within a temperature range of -55°C to 150°C. RoHS compliant and lead-free.
PackageTO-247
MountingThrough Hole
PolarityN-CHANNEL
Power110W
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Technical Specifications
Stmicroelectronics STW13N60M2 technical specifications.
General
Package/Case
TO-247
Continuous Drain Current (ID)
11A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
380mR
Drain to Source Voltage (Vdss)
600V
Fall Time
9.5ns
Gate to Source Voltage (Vgs)
25V
Height
20.15mm
Input Capacitance
580pF
Lead Free
Lead Free
Length
15.75mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
110W
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Package Quantity
30
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
110W
Rds On Max
380mR
RoHS Compliant
Yes
Series
MDmesh™ II Plus
Turn-Off Delay Time
41ns
Turn-On Delay Time
11ns
Weight
1.340411oz
Width
5.75mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STW13N60M2 Datasheet
Download the complete datasheet for Stmicroelectronics STW13N60M2 to view detailed technical specifications.
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