Stmicroelectronics
STW150NF55
120A, 55V, 0.006ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, ROHS COMPLIANT PACKAGE-3
PackageTO-247-3
MountingThrough Hole
PolarityN-CHANNEL
Power300W
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Technical Specifications
Stmicroelectronics STW150NF55 technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 120A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Resistance | 6mR |
| Drain to Source Voltage (Vdss) | 55V |
| Fall Time | 80ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 4.4nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Radiation Hardening | No |
| Rds On Max | 6mR |
| RoHS Compliant | Yes |
| Series | STripFET™ II |
| Turn-Off Delay Time | 140ns |
| Turn-On Delay Time | 35ns |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STW150NF55 Datasheet
Download the complete datasheet for Stmicroelectronics STW150NF55 to view detailed technical specifications.
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