
N-channel Power MOSFET featuring 800V drain-source voltage and 14A continuous drain current. This single-element SuperMESH process technology transistor operates in enhancement mode with a gate threshold voltage of 5V. Housed in a TO-247 package with 3 through-hole pins and a tab, it offers a maximum power dissipation of 190W and a drain-source on-resistance of 375mOhm at 10V. Operating temperature range is -55°C to 150°C.
Stmicroelectronics STW15N80K5 technical specifications.
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