N-channel power MOSFET featuring 600V drain-source breakdown voltage and 14A continuous drain current. This through-hole component offers a low 0.27 Ohm typical drain-source on-resistance and is housed in a TO-247 package. Key performance specifications include a 4V threshold voltage, 1.25nF input capacitance, and fast switching times with a 17ns turn-on delay and 28ns fall time. Maximum power dissipation is rated at 125W, with operating temperatures ranging from -55°C to 150°C. This RoHS compliant device is designed for demanding power applications.
PackageTO-247
MountingThrough Hole
PolarityN-CHANNEL
Power125W
Quick Jump:
Technical Specifications
Stmicroelectronics STW15NM60ND technical specifications.
General
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 14A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 299mR |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 299mR |
| Fall Time | 28ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 20.15mm |
| Input Capacitance | 1.25nF |
| Lead Free | Lead Free |
| Length | 15.75mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 125W |
| Radiation Hardening | No |
| Rds On Max | 299mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | FDmesh™ |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 47ns |
| Turn-On Delay Time | 17ns |
| Width | 5.15mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STW15NM60ND Datasheet
Download the complete datasheet for Stmicroelectronics STW15NM60ND to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
