The STW16NB60 is a high-power N-CHANNEL MOSFET with a drain to source breakdown voltage of 600V and a continuous drain current of 16A. It features a low drain to source resistance of 350mR and a fast fall time of 12ns. The device is packaged in a TO-247 package and is suitable for operation over a temperature range of -65°C to 150°C. The STW16NB60 is RoHS compliant and available in quantities of 30 per rail or tube packaging.
PackageTO-247
PolarityN-CHANNEL
Power220W
Quick Jump:
Technical Specifications
Stmicroelectronics STW16NB60 technical specifications.
General
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 16A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 350mR |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 220W |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STW16NB60 Datasheet
Download the complete datasheet for Stmicroelectronics STW16NB60 to view detailed technical specifications.
No datasheet is available for this part.