N-channel power MOSFET featuring 620V drain-source breakdown voltage and 15.5A continuous drain current. Offers a low 380mΩ maximum drain-source on-resistance at a 10V gate-source voltage. Designed for through-hole mounting in a TO-247 package, this component boasts a maximum power dissipation of 190W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 22ns turn-on delay and a 63ns fall time.
PackageTO-247
MountingThrough Hole
PolarityN-CHANNEL
Power190W
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Technical Specifications
Stmicroelectronics STW17N62K3 technical specifications.
General
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 15.5A |
| Drain to Source Breakdown Voltage | 620V |
| Drain to Source Resistance | 380mR |
| Drain to Source Voltage (Vdss) | 620V |
| Drain-source On Resistance-Max | 280mR |
| Fall Time | 63ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 20.15mm |
| Input Capacitance | 2.5nF |
| Lead Free | Lead Free |
| Length | 15.75mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 190W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 190W |
| Radiation Hardening | No |
| Rds On Max | 380mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | SuperMESH3™ |
| Threshold Voltage | 3.75V |
| Turn-Off Delay Time | 110ns |
| Turn-On Delay Time | 22ns |
| Width | 5.15mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STW17N62K3 Datasheet
Download the complete datasheet for Stmicroelectronics STW17N62K3 to view detailed technical specifications.
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