N-channel Power MOSFET with 650V drain-source voltage and 15A continuous drain current. Features enhancement mode operation, MDmesh process technology, and a 3-pin TO-247 package for through-hole mounting. Maximum power dissipation is 110W, with a gate threshold voltage of 5V and low on-resistance of 220mOhm at 10V. Operating temperature range is -55°C to 150°C.
PackageTO-247
MountingThrough Hole
Quick Jump:
Technical Specifications
Stmicroelectronics STW18N65M5 technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-247 |
| Package/Case | TO-247 |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 15.75(Max) |
| Package Width (mm) | 5.15(Max) |
| Package Height (mm) | 20.15(Max) |
| Seated Plane Height (mm) | 24.45(Max) |
| Pin Pitch (mm) | 5.45 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | MDmesh |
| Maximum Drain Source Voltage | 650V |
| Maximum Gate Source Voltage | ±25V |
| Maximum Continuous Drain Current | 15A |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Drain Source Resistance | 220@10VmOhm |
| Typical Gate Charge @ Vgs | 31@10VnC |
| Typical Gate Charge @ 10V | 31nC |
| Typical Input Capacitance @ Vds | 1240@100VpF |
| Maximum Power Dissipation | 110000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | SCR76 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Stmicroelectronics STW18N65M5 Datasheet
Download the complete datasheet for Stmicroelectronics STW18N65M5 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.