N-channel power MOSFET featuring 600V drain-to-source breakdown voltage and 16A continuous drain current. This through-hole component offers a low 360mΩ drain-to-source resistance (Rds On Max) and a maximum power dissipation of 230W. Designed for demanding applications, it operates within a temperature range of -55°C to 150°C and is packaged in a TO-247-3 configuration. Key switching parameters include a 34ns turn-on delay and 47ns fall time.
PackageTO-247-3
Current Rating16A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STW18NK60Z technical specifications.
General
Package/Case
TO-247-3
Continuous Drain Current (ID)
16A
Current Rating
16A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
360mR
Drain to Source Voltage (Vdss)
600V
Fall Time
47ns
Gate to Source Voltage (Vgs)
30V
Input Capacitance
3.54nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
230W
Mount
Through Hole
Package Quantity
600
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
230W
Radiation Hardening
No
Rds On Max
360mR
RoHS Compliant
Yes
Series
SuperMESH™
Turn-Off Delay Time
82ns
Turn-On Delay Time
34ns
DC Rated Voltage
600V
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STW18NK60Z Datasheet
Download the complete datasheet for Stmicroelectronics STW18NK60Z to view detailed technical specifications.
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