
N-channel power MOSFET featuring 600V drain-to-source breakdown voltage and 16A continuous drain current. This through-hole component offers a low 360mΩ drain-to-source resistance (Rds On Max) and a maximum power dissipation of 230W. Designed for demanding applications, it operates within a temperature range of -55°C to 150°C and is packaged in a TO-247-3 configuration. Key switching parameters include a 34ns turn-on delay and 47ns fall time.
Stmicroelectronics STW18NK60Z technical specifications.
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 16A |
| Current Rating | 16A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 360mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 47ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 3.54nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 230W |
| Mount | Through Hole |
| Package Quantity | 600 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 230W |
| Radiation Hardening | No |
| Rds On Max | 360mR |
| RoHS Compliant | Yes |
| Series | SuperMESH™ |
| Turn-Off Delay Time | 82ns |
| Turn-On Delay Time | 34ns |
| DC Rated Voltage | 600V |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STW18NK60Z to view detailed technical specifications.
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