N-channel power MOSFET featuring 800V drain-to-source breakdown voltage and 17A continuous drain current. This MDmesh™ series component offers a low 295mΩ drain-to-source resistance (Rds On Max) and 190W maximum power dissipation. Designed for through-hole mounting in a TO-247 package, it operates within a temperature range of -65°C to 150°C. Key switching characteristics include an 18ns turn-on delay and 50ns fall time.
PackageTO-247
MountingThrough Hole
PolarityN-CHANNEL
Power190W
Quick Jump:
Technical Specifications
Stmicroelectronics STW18NM80 technical specifications.
General
Package/Case
TO-247
Continuous Drain Current (ID)
17A
Drain to Source Breakdown Voltage
800V
Drain to Source Resistance
295mR
Drain to Source Voltage (Vdss)
800V
Fall Time
50ns
Gate to Source Voltage (Vgs)
30V
Height
20.15mm
Input Capacitance
2.07nF
Lead Free
Lead Free
Length
15.75mm
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
190W
Mount
Through Hole
Number of Elements
1
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
190W
Radiation Hardening
No
Rds On Max
295mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
MDmesh™
Threshold Voltage
4V
Turn-Off Delay Time
96ns
Turn-On Delay Time
18ns
Width
5.15mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STW18NM80 Datasheet
Download the complete datasheet for Stmicroelectronics STW18NM80 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
