N-channel power MOSFET featuring 800V drain-to-source breakdown voltage and 17A continuous drain current. This MDmesh™ series component offers a low 295mΩ drain-to-source resistance (Rds On Max) and 190W maximum power dissipation. Designed for through-hole mounting in a TO-247 package, it operates within a temperature range of -65°C to 150°C. Key switching characteristics include an 18ns turn-on delay and 50ns fall time.
Stmicroelectronics STW18NM80 technical specifications.
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