N-channel power MOSFET featuring 650V drain-source breakdown voltage and 15.5A continuous drain current. This through-hole component offers a low 270mΩ drain-source on-resistance. Operating across a wide temperature range of -55°C to 150°C, it supports a maximum power dissipation of 150W. The TO-247-3 package is RoHS compliant, with typical turn-on delay of 25ns and fall time of 26ns.
PackageTO-247-3
MountingThrough Hole
PolarityN-CHANNEL
Power150W
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Technical Specifications
Stmicroelectronics STW19NM65N technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 15.5A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 270mR |
| Drain to Source Voltage (Vdss) | 650V |
| Drain-source On Resistance-Max | 270mR |
| Fall Time | 26ns |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 1.9nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Through Hole |
| Package Quantity | 600 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 150W |
| Radiation Hardening | No |
| Rds On Max | 270mR |
| RoHS Compliant | Yes |
| Series | MDmesh™ II |
| Turn-Off Delay Time | 80ns |
| Turn-On Delay Time | 25ns |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STW19NM65N Datasheet
Download the complete datasheet for Stmicroelectronics STW19NM65N to view detailed technical specifications.
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