
N-channel Power MOSFET featuring 950V drain-source breakdown voltage and 17.5A continuous drain current. Offers a low 0.275 Ohm typical drain-source on-resistance. Designed for through-hole mounting in a TO-247 package, this component boasts a maximum power dissipation of 250W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 17ns turn-on delay and a 20ns fall time.
Stmicroelectronics STW20N95K5 technical specifications.
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 17.5A |
| Drain to Source Breakdown Voltage | 950V |
| Drain to Source Resistance | 330mR |
| Drain to Source Voltage (Vdss) | 950V |
| Drain-source On Resistance-Max | 330MR |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 20.15mm |
| Input Capacitance | 1.5nF |
| Lead Free | Lead Free |
| Length | 15.75mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 250W |
| Radiation Hardening | No |
| Rds On Max | 330mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | SuperMESH5™ |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 70ns |
| Turn-On Delay Time | 17ns |
| Width | 5.15mm |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STW20N95K5 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
