N-channel power MOSFET featuring 500V drain-source breakdown voltage and 20A continuous drain current. Offers a low 250mΩ maximum drain-source on-resistance. Designed for through-hole mounting in a TO-247 package, this component boasts a maximum power dissipation of 214W and operates within a temperature range of -65°C to 150°C. Key switching characteristics include an 8.5ns fall time and 24ns turn-on delay time.
PackageTO-247
Current Rating20A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STW20NM50 technical specifications.
General
Package/Case
TO-247
Continuous Drain Current (ID)
20A
Current Rating
20A
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
250mR
Drain to Source Voltage (Vdss)
550V
Drain-source On Resistance-Max
250mR
Fall Time
8.5ns
Gate to Source Voltage (Vgs)
30V
Height
20.15mm
Input Capacitance
1.48nF
Lead Free
Lead Free
Length
15.75mm
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
214W
Mount
Through Hole
Number of Elements
1
Package Quantity
30
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
214W
Rds On Max
250mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
MDmesh™
Threshold Voltage
4V
Turn-On Delay Time
24ns
DC Rated Voltage
550V
Width
5.15mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STW20NM50 Datasheet
Download the complete datasheet for Stmicroelectronics STW20NM50 to view detailed technical specifications.
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