N-Channel Power MOSFET featuring 600V drain-source breakdown voltage and 20A continuous drain current. This component offers a low 290mΩ maximum drain-source on-resistance and a 4V threshold voltage. Designed for through-hole mounting in a TO-247 package, it boasts a maximum power dissipation of 214W and operates within a temperature range of -65°C to 150°C. Key switching characteristics include a 25ns turn-on delay and a 22ns fall time.
PackageTO-247
Current Rating20A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STW20NM60FD technical specifications.
General
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 20A |
| Current Rating | 20A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 290mR |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 290mR |
| Fall Time | 22ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 20.15mm |
| Input Capacitance | 1.3nF |
| Lead Free | Lead Free |
| Length | 15.75mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 214W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 214W |
| Radiation Hardening | No |
| Rds On Max | 290mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | FDmesh™ |
| Threshold Voltage | 4V |
| Turn-On Delay Time | 25ns |
| DC Rated Voltage | 600V |
| Width | 5.15mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STW20NM60FD Datasheet
Download the complete datasheet for Stmicroelectronics STW20NM60FD to view detailed technical specifications.
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