N-channel Power MOSFET featuring 650V drain-source breakdown voltage and 17A continuous drain current. Offers a low 190mΩ maximum drain-source on-resistance. Designed for through-hole mounting in a TO-247 package, this component boasts a 125W maximum power dissipation and operates across a wide temperature range of -55°C to 150°C. Includes fast switching characteristics with a 24ns fall time and 12ns turn-off delay.
PackageTO-247
MountingThrough Hole
PolarityN-CHANNEL
Power125W
Quick Jump:
Technical Specifications
Stmicroelectronics STW21N65M5 technical specifications.
General
Package/Case
TO-247
Continuous Drain Current (ID)
17A
Drain to Source Breakdown Voltage
650V
Drain to Source Resistance
190mR
Drain to Source Voltage (Vdss)
650V
Drain-source On Resistance-Max
190mR
Fall Time
24ns
Gate to Source Voltage (Vgs)
25V
Height
20.15mm
Input Capacitance
1.95nF
Lead Free
Lead Free
Length
15.75mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
125W
Mount
Through Hole
Package Quantity
30
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
125W
Radiation Hardening
No
Rds On Max
190mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
MDmesh™ V
Threshold Voltage
4V
Turn-Off Delay Time
12ns
Width
5.15mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STW21N65M5 Datasheet
Download the complete datasheet for Stmicroelectronics STW21N65M5 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
