N-channel power MOSFET featuring 600V drain-source breakdown voltage and 17A continuous drain current. This through-hole component offers a low 0.22 ohm Rds On resistance and 140W power dissipation, packaged in a TO-247AD for efficient thermal management. Key specifications include a 3V threshold voltage, 1.9nF input capacitance, and fast switching times with a 31ns fall time. RoHS compliant and designed for demanding applications.
PackageTO-247
Current Rating17A
MountingThrough Hole
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Stmicroelectronics STW21NM60N technical specifications.
General
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 17A |
| Current Rating | 17A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 190mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 31ns |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 1.9nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 140W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 140W |
| Rds On Max | 220mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | MDmesh™ |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 84ns |
| DC Rated Voltage | 600V |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STW21NM60N Datasheet
Download the complete datasheet for Stmicroelectronics STW21NM60N to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
