
N-CHANNEL Power MOSFET, TO-247-3 package, featuring 75V drain-to-source breakdown voltage and 120A continuous drain current. Offers a low 4.4mR drain-to-source resistance at 10V gate-source voltage. Maximum power dissipation is 500W, with operating temperatures ranging from -55°C to 175°C. Includes fast switching characteristics with turn-on delay of 50ns and fall time of 130ns.
Stmicroelectronics STW220NF75 technical specifications.
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 120A |
| Current Rating | 120A |
| Drain to Source Breakdown Voltage | 75V |
| Drain to Source Resistance | 4.4mR |
| Drain to Source Voltage (Vdss) | 75V |
| Fall Time | 130ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 12.5nF |
| Lead Free | Contains Lead |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 500W |
| Radiation Hardening | No |
| Rds On Max | 4.4mR |
| RoHS Compliant | Yes |
| Series | STripFET™ II |
| Turn-Off Delay Time | 250ns |
| Turn-On Delay Time | 50ns |
| DC Rated Voltage | 75V |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STW220NF75 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.