Stmicroelectronics
STW24NM65N
19A, 650V, 0.19ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, ROHS COMPLIANT PACKAGE-3
PackageTO-247-3
MountingThrough Hole
PolarityN-CHANNEL
Power160W
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Technical Specifications
Stmicroelectronics STW24NM65N technical specifications.
General
Package/Case
TO-247-3
Continuous Drain Current (ID)
19A
Drain to Source Breakdown Voltage
650V
Drain to Source Resistance
190mR
Drain to Source Voltage (Vdss)
650V
Fall Time
20ns
Gate to Source Voltage (Vgs)
25V
Input Capacitance
2.5nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
160W
Mount
Through Hole
Package Quantity
600
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
160W
Radiation Hardening
No
Rds On Max
190mR
RoHS Compliant
Yes
Series
MDmesh™ II
Turn-Off Delay Time
80ns
Turn-On Delay Time
25ns
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STW24NM65N Datasheet
Download the complete datasheet for Stmicroelectronics STW24NM65N to view detailed technical specifications.
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