
N-CHANNEL POWER MOSFET, TO-247 package, featuring 950V drain-source breakdown voltage and 22A continuous drain current. Offers a maximum drain-source on-resistance of 320mR at 10Vgs. Operates with a threshold voltage of 4V and gate-source voltage up to 30V. Includes fast switching characteristics with turn-on delay of 39ns and fall time of 59ns. Maximum power dissipation is 400W, with operating temperatures from -55°C to 150°C. RoHS compliant.
Stmicroelectronics STW25N95K3 technical specifications.
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 22A |
| Drain to Source Breakdown Voltage | 950V |
| Drain to Source Resistance | 360mR |
| Drain to Source Voltage (Vdss) | 950V |
| Drain-source On Resistance-Max | 320mR |
| Fall Time | 59ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 20.15mm |
| Input Capacitance | 3.68nF |
| Lead Free | Lead Free |
| Length | 15.75mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 400W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 400W |
| Radiation Hardening | No |
| Rds On Max | 360mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | SuperMESH3™ |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 97ns |
| Turn-On Delay Time | 39ns |
| Width | 5.15mm |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STW25N95K3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.