
N-Channel Power MOSFET featuring 500V Drain-Source Breakdown Voltage and 22A Continuous Drain Current. This through-hole component offers a low 140mΩ Drain-Source On-Resistance and 160W maximum power dissipation. Key specifications include a 3V threshold voltage, 2.565nF input capacitance, and fast switching times with a 22ns fall time and 75ns turn-off delay. Packaged in a TO-247 case, it operates from -55°C to 150°C and is RoHS compliant.
Stmicroelectronics STW25NM50N technical specifications.
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 22A |
| Current Rating | 22A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 140mR |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 140mR |
| Fall Time | 22ns |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 2.565nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 160W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 160W |
| Rds On Max | 140mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | MDmesh™ II |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 75ns |
| DC Rated Voltage | 550V |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STW25NM50N to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
