N-Channel Power MOSFET featuring 500V drain-source breakdown voltage and 120mΩ maximum drain-source on-resistance. This through-hole component offers a continuous drain current of 30A and a maximum power dissipation of 313W. It operates within a temperature range of -55°C to 150°C and is housed in a TO-247 package. Key switching characteristics include a 19ns fall time and 13ns turn-off delay time. RoHS compliant and Zener-protected.
PackageTO-247
Current Rating30A
MountingThrough Hole
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Stmicroelectronics STW26NM50 technical specifications.
General
Package/Case
TO-247
Continuous Drain Current (ID)
30A
Current Rating
30A
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
120mR
Drain to Source Voltage (Vdss)
500V
Drain-source On Resistance-Max
120mR
Fall Time
19ns
Gate to Source Voltage (Vgs)
30V
Height
20.15mm
Input Capacitance
3nF
Lead Free
Lead Free
Length
15.75mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
313W
Mount
Through Hole
Number of Elements
1
Package Quantity
30
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
313W
Radiation Hardening
No
Rds On Max
120mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
MDmesh™
Threshold Voltage
4V
Turn-Off Delay Time
13ns
Turn-On Delay Time
28ns
DC Rated Voltage
500V
Width
5.15mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STW26NM50 Datasheet
Download the complete datasheet for Stmicroelectronics STW26NM50 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
