N-channel power MOSFET featuring 600V drain-source breakdown voltage and 20A continuous drain current. Offers a low 0.135 Ohm typical drain-source on-resistance, with a maximum of 0.165 Ohm. Designed for through-hole mounting in a TO-247 package, this component boasts a maximum power dissipation of 140W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 13ns turn-on delay and 50ns fall time.
PackageTO-247
MountingThrough Hole
PolarityN-CHANNEL
Power140W
Quick Jump:
Technical Specifications
Stmicroelectronics STW26NM60N technical specifications.
General
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 20A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 135mR |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 165mR |
| Fall Time | 50ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 20.15mm |
| Input Capacitance | 1.8nF |
| Lead Free | Lead Free |
| Length | 15.75mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 140W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 140W |
| Radiation Hardening | No |
| Rds On Max | 165mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | MDmesh™ II |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 85ns |
| Turn-On Delay Time | 13ns |
| Width | 5.15mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STW26NM60N Datasheet
Download the complete datasheet for Stmicroelectronics STW26NM60N to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
