N-channel Power MOSFET, 600V Drain to Source Breakdown Voltage, 22A Continuous Drain Current, and 0.135 Ohm typical Drain to Source Resistance. Features include a 150°C maximum operating temperature, 170W maximum power dissipation, and a TO-247 through-hole package. This component offers fast switching characteristics with a 8ns fall time and 14.5ns turn-on delay time. It is RoHS compliant and lead-free.
PackageTO-247
MountingThrough Hole
PolarityN-CHANNEL
Power170W
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Technical Specifications
Stmicroelectronics STW28N60M2 technical specifications.
General
Package/Case
TO-247
Continuous Drain Current (ID)
24A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
120mR
Drain to Source Voltage (Vdss)
600V
Fall Time
8ns
Gate to Source Voltage (Vgs)
25V
Height
20.15mm
Input Capacitance
1.37nF
Lead Free
Lead Free
Length
15.75mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
170W
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Package Quantity
30
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
170W
Rds On Max
150mR
RoHS Compliant
Yes
Series
MDmesh™ II Plus
Turn-Off Delay Time
100ns
Turn-On Delay Time
14.5ns
Weight
1.340411oz
Width
5.15mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STW28N60M2 Datasheet
Download the complete datasheet for Stmicroelectronics STW28N60M2 to view detailed technical specifications.
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