
N-channel Power MOSFET, 600V Drain to Source Breakdown Voltage, 22A Continuous Drain Current, and 0.135 Ohm typical Drain to Source Resistance. Features include a 150°C maximum operating temperature, 170W maximum power dissipation, and a TO-247 through-hole package. This component offers fast switching characteristics with a 8ns fall time and 14.5ns turn-on delay time. It is RoHS compliant and lead-free.
Stmicroelectronics STW28N60M2 technical specifications.
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 24A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 120mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 20.15mm |
| Input Capacitance | 1.37nF |
| Lead Free | Lead Free |
| Length | 15.75mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 170W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 170W |
| Rds On Max | 150mR |
| RoHS Compliant | Yes |
| Series | MDmesh™ II Plus |
| Turn-Off Delay Time | 100ns |
| Turn-On Delay Time | 14.5ns |
| Weight | 1.340411oz |
| Width | 5.15mm |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STW28N60M2 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
