
N-channel power MOSFET featuring 500V drain-source breakdown voltage and 21A continuous drain current. This through-hole component offers a low 158mΩ maximum drain-source on-resistance and a 150W power dissipation. Designed with a TO-247 package, it operates within a -55°C to 150°C temperature range and includes fast switching characteristics with turn-on delay of 13.6ns and fall time of 52ns.
Stmicroelectronics STW28NM50N technical specifications.
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