N-channel power MOSFET featuring 500V drain-source breakdown voltage and 21A continuous drain current. This through-hole component offers a low 158mΩ maximum drain-source on-resistance and a 150W power dissipation. Designed with a TO-247 package, it operates within a -55°C to 150°C temperature range and includes fast switching characteristics with turn-on delay of 13.6ns and fall time of 52ns.
PackageTO-247
MountingThrough Hole
PolarityN-CHANNEL
Power150W
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Technical Specifications
Stmicroelectronics STW28NM50N technical specifications.
General
Package/Case
TO-247
Continuous Drain Current (ID)
21A
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
158mR
Drain to Source Voltage (Vdss)
500V
Drain-source On Resistance-Max
158mR
Fall Time
52ns
Gate to Source Voltage (Vgs)
25V
Height
20.15mm
Input Capacitance
1.735nF
Lead Free
Lead Free
Length
15.75mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
150W
Mount
Through Hole
Number of Elements
1
Package Quantity
600
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
150W
Radiation Hardening
No
Rds On Max
158mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
MDmesh™
Threshold Voltage
3V
Turn-Off Delay Time
62ns
Turn-On Delay Time
13.6ns
Width
5.15mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STW28NM50N Datasheet
Download the complete datasheet for Stmicroelectronics STW28NM50N to view detailed technical specifications.
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