N-channel power MOSFET featuring 500V drain-source breakdown voltage and 31A continuous drain current. This through-hole component offers a low 130mΩ drain-source resistance (Rds On Max) and a maximum power dissipation of 350W. Designed for demanding applications, it operates within a temperature range of -55°C to 150°C and is housed in a TO-247 package. Key switching characteristics include a 44.5ns turn-on delay and a 33ns fall time.
PackageTO-247
Current Rating31A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STW29NK50Z technical specifications.
General
Package/Case
TO-247
Continuous Drain Current (ID)
31A
Current Rating
31A
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
130mR
Drain to Source Voltage (Vdss)
500V
Fall Time
33ns
Gate to Source Voltage (Vgs)
30V
Height
20.15mm
Input Capacitance
6.11nF
Lead Free
Lead Free
Length
15.75mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
350W
Mount
Through Hole
Package Quantity
600
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
350W
Rds On Max
130mR
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Series
SuperMESH™
Turn-Off Delay Time
129ns
Turn-On Delay Time
44.5ns
DC Rated Voltage
500V
Width
5.15mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STW29NK50Z Datasheet
Download the complete datasheet for Stmicroelectronics STW29NK50Z to view detailed technical specifications.
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