N-CHANNEL POWER MOSFET featuring 200V drain-source breakdown voltage and 30A continuous drain current. This through-hole component offers a low 75mΩ Rds On resistance and 125W maximum power dissipation. Designed for demanding applications, it operates within a -55°C to 150°C temperature range and is housed in a TO-247-3 package. Key switching characteristics include a 35ns turn-on delay and 8.8ns fall time.
PackageTO-247-3
Current Rating30A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STW30N20 technical specifications.
General
Package/Case
TO-247-3
Continuous Drain Current (ID)
30A
Current Rating
30A
Drain to Source Breakdown Voltage
200V
Drain to Source Resistance
65mR
Drain to Source Voltage (Vdss)
200V
Fall Time
8.8ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
1.597nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
125W
Mount
Through Hole
Package Quantity
600
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
125W
Radiation Hardening
No
Rds On Max
75mR
RoHS Compliant
No
Series
STripFET™
Turn-Off Delay Time
38ns
Turn-On Delay Time
35ns
DC Rated Voltage
200V
Compliance
RoHS
Not CompliantNo
Datasheet
Stmicroelectronics STW30N20 Datasheet
Download the complete datasheet for Stmicroelectronics STW30N20 to view detailed technical specifications.
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