N-channel Power MOSFET featuring 650V drain-source breakdown voltage and 22A continuous drain current. Offers a low 0.125 Ohm typical drain-source on-resistance and 139mR maximum Rds(on). Designed for through-hole mounting in a TO-247 package, this component boasts a 140W maximum power dissipation and operates within a temperature range of -55°C to 150°C. Includes fast switching characteristics with turn-on/off delay times of 50ns and a fall time of 10ns.
PackageTO-247
MountingThrough Hole
PolarityN-CHANNEL
Power140W
Quick Jump:
Technical Specifications
Stmicroelectronics STW30N65M5 technical specifications.
General
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 22A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 139mR |
| Drain to Source Voltage (Vdss) | 650V |
| Drain-source On Resistance-Max | 139mR |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 20.15mm |
| Input Capacitance | 2.88nF |
| Lead Free | Lead Free |
| Length | 15.75mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 140W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 140W |
| Radiation Hardening | No |
| Rds On Max | 139mR |
| RoHS Compliant | Yes |
| Series | MDmesh™ V |
| Turn-Off Delay Time | 50ns |
| Turn-On Delay Time | 50ns |
| Width | 5.15mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STW30N65M5 Datasheet
Download the complete datasheet for Stmicroelectronics STW30N65M5 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
