N-CHANNEL Power MOSFET featuring 200V drain-source breakdown voltage and 30A continuous drain current. Offers a low 75mR drain-to-source resistance (Rds On Max) and 125W maximum power dissipation. Designed for through-hole mounting in a TO-247 package, this RoHS compliant component has a threshold voltage of 3V and operates within a temperature range of -55°C to 150°C. Key switching characteristics include an 8.8ns fall time, 35ns turn-on delay, and 38ns turn-off delay.
PackageTO-247
MountingThrough Hole
PolarityN-CHANNEL
Power125W
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Technical Specifications
Stmicroelectronics STW30NF20 technical specifications.
General
Package/Case
TO-247
Continuous Drain Current (ID)
30A
Drain to Source Breakdown Voltage
200V
Drain to Source Resistance
75mR
Drain to Source Voltage (Vdss)
200V
Fall Time
8.8ns
Gate to Source Voltage (Vgs)
20V
Height
20.15mm
Input Capacitance
1.597nF
Length
15.75mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
125W
Mount
Through Hole
Package Quantity
600
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
125W
Radiation Hardening
No
Rds On Max
75mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
STripFET™
Threshold Voltage
3V
Turn-Off Delay Time
38ns
Turn-On Delay Time
35ns
Width
5.15mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STW30NF20 Datasheet
Download the complete datasheet for Stmicroelectronics STW30NF20 to view detailed technical specifications.
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