N-channel Power MOSFET featuring 600V drain-to-source breakdown voltage and 30A continuous drain current. This through-hole component offers a low 145mΩ drain-to-source resistance (Rds On) and a maximum power dissipation of 312W. Designed for high-efficiency switching applications, it operates within a temperature range of -55°C to 150°C and is packaged in a TO-247-3 configuration. Key switching characteristics include a 35ns fall time and 75ns turn-off delay time.
PackageTO-247-3
Voltage600V
Current34A
Current Rating30A
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Technical Specifications
Stmicroelectronics STW30NM60D technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 30A |
| Current | 34A |
| Current Rating | 30A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 145mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 35ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 2.52nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 312W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 312W |
| Rds On Max | 145mR |
| RoHS Compliant | Yes |
| Series | MDmesh™ |
| Turn-Off Delay Time | 75ns |
| Voltage | 600V |
| DC Rated Voltage | 600V |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STW30NM60D Datasheet
Download the complete datasheet for Stmicroelectronics STW30NM60D to view detailed technical specifications.
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