N-channel Power MOSFET featuring 500V drain-source voltage and 22A continuous drain current. This single-element transistor utilizes MDmesh process technology and offers a low 130mOhm drain-source resistance at 10V. Packaged in a TO-247 plastic through-hole configuration with 3 pins and a tab, it operates from -55°C to 150°C. Key specifications include a ±25V gate-source voltage and 62.5nC typical gate charge.
PackageTO-247
MountingThrough Hole
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Technical Specifications
Stmicroelectronics STW32NM50N technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-247
Package/Case
TO-247
Package Description
Transistor Outline Package
Lead Shape
Through Hole
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
15.75(Max)
Package Width (mm)
5.15(Max)
Package Height (mm)
20.15(Max)
Seated Plane Height (mm)
24.45(Max)
Pin Pitch (mm)
5.45
Package Material
Plastic
Mounting
Through Hole
Jedec
TO-247
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
MDmesh
Maximum Drain Source Voltage
500V
Maximum Gate Source Voltage
±25V
Maximum Continuous Drain Current
22A
Maximum Gate Threshold Voltage
4V
Maximum Drain Source Resistance
130@10VmOhm
Typical Gate Charge @ Vgs
62.5@10VnC
Typical Gate Charge @ 10V
62.5nC
Typical Input Capacitance @ Vds
1973@50VpF
Maximum Power Dissipation
190000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SCR76
EU RoHS
Yes with Exemption
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Stmicroelectronics STW32NM50N Datasheet
Download the complete datasheet for Stmicroelectronics STW32NM50N to view detailed technical specifications.
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