
N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 29A continuous drain current. This TO-247 packaged device offers a low 110mΩ maximum drain-source on-resistance and 190W maximum power dissipation. Designed with a 4V threshold voltage and fast switching characteristics including 30ns turn-on delay and 61.8ns fall time, it incorporates a fast diode. Suitable for through-hole mounting, this RoHS compliant component operates from -55°C to 150°C.
Stmicroelectronics STW34NM60ND technical specifications.
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