N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 29A continuous drain current. This TO-247 packaged device offers a low 110mΩ maximum drain-source on-resistance and 190W maximum power dissipation. Designed with a 4V threshold voltage and fast switching characteristics including 30ns turn-on delay and 61.8ns fall time, it incorporates a fast diode. Suitable for through-hole mounting, this RoHS compliant component operates from -55°C to 150°C.
PackageTO-247
MountingThrough Hole
PolarityN-CHANNEL
Power190W
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Technical Specifications
Stmicroelectronics STW34NM60ND technical specifications.
General
Package/Case
TO-247
Continuous Drain Current (ID)
29A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
110mR
Drain to Source Voltage (Vdss)
600V
Drain-source On Resistance-Max
110MR
Fall Time
61.8ns
Gate to Source Voltage (Vgs)
25V
Height
20.15mm
Input Capacitance
2.785nF
Lead Free
Lead Free
Length
15.75mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
190W
Mount
Through Hole
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
190W
Radiation Hardening
No
Rds On Max
110mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
FDmesh™ II
Threshold Voltage
4V
Turn-Off Delay Time
111ns
Turn-On Delay Time
30ns
Width
5.15mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STW34NM60ND Datasheet
Download the complete datasheet for Stmicroelectronics STW34NM60ND to view detailed technical specifications.
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