N-channel Power MOSFET featuring 650V drain-source breakdown voltage and 27A continuous drain current. Offers low 85mΩ typical drain-source on-resistance and a maximum of 98mΩ. Designed for through-hole mounting in a TO-247 package, this component operates within a -55°C to 150°C temperature range and supports a maximum power dissipation of 160W. Key switching characteristics include a 16ns fall time, 60ns turn-on delay, and 60ns turn-off delay.
Stmicroelectronics STW35N65M5 technical specifications.
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