N-Channel Power MOSFET featuring 200V drain-source breakdown voltage and 40A continuous drain current. Offers a low 45mΩ drain-source on-resistance. Designed for through-hole mounting in a TO-247-3 package, with a maximum power dissipation of 160W. Operates across a wide temperature range from -55°C to 150°C. Includes fast switching characteristics with a 20ns turn-on delay and 24ns fall time.
PackageTO-247-3
Current Rating40A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STW40N20 technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 40A |
| Current Rating | 40A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 45mR |
| Drain to Source Voltage (Vdss) | 200V |
| Fall Time | 24ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.5nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 160W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 160W |
| Radiation Hardening | No |
| Rds On Max | 45mR |
| RoHS Compliant | Yes |
| Series | STripFET™ |
| Turn-Off Delay Time | 74ns |
| Turn-On Delay Time | 20ns |
| DC Rated Voltage | 200V |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STW40N20 Datasheet
Download the complete datasheet for Stmicroelectronics STW40N20 to view detailed technical specifications.
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