N-Channel Power MOSFET featuring 200V drain-source breakdown voltage and 40A continuous drain current. Offers a low 45mΩ drain-source on-resistance. Designed for through-hole mounting in a TO-247-3 package, with a maximum power dissipation of 160W. Operates across a wide temperature range from -55°C to 150°C. Includes fast switching characteristics with a 20ns turn-on delay and 24ns fall time.
PackageTO-247-3
Current Rating40A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STW40N20 technical specifications.
General
Package/Case
TO-247-3
Continuous Drain Current (ID)
40A
Current Rating
40A
Drain to Source Breakdown Voltage
200V
Drain to Source Resistance
45mR
Drain to Source Voltage (Vdss)
200V
Fall Time
24ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
2.5nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
160W
Mount
Through Hole
Package Quantity
30
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
160W
Radiation Hardening
No
Rds On Max
45mR
RoHS Compliant
Yes
Series
STripFET™
Turn-Off Delay Time
74ns
Turn-On Delay Time
20ns
DC Rated Voltage
200V
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STW40N20 Datasheet
Download the complete datasheet for Stmicroelectronics STW40N20 to view detailed technical specifications.
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