
N-channel power MOSFET featuring 600V drain-source voltage and 34A continuous drain current. This device offers a low 0.078 Ohm typical drain-source on-resistance and a maximum of 88mR. Designed for through-hole mounting in a TO-247-3 package, it operates within a temperature range of -55°C to 150°C and supports a maximum power dissipation of 250W. Key switching characteristics include an 11ns fall time, 20.5ns turn-on delay, and 96ns turn-off delay. This RoHS compliant component is lead-free.
Stmicroelectronics STW40N60M2 technical specifications.
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 34A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 88mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 2.5nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 88mR |
| RoHS Compliant | Yes |
| Series | MDmesh™ II Plus |
| Turn-Off Delay Time | 96ns |
| Turn-On Delay Time | 20.5ns |
| Weight | 1.340411oz |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STW40N60M2 to view detailed technical specifications.
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