N-channel power MOSFET featuring 600V drain-source voltage and 34A continuous drain current. This device offers a low 0.078 Ohm typical drain-source on-resistance and a maximum of 88mR. Designed for through-hole mounting in a TO-247-3 package, it operates within a temperature range of -55°C to 150°C and supports a maximum power dissipation of 250W. Key switching characteristics include an 11ns fall time, 20.5ns turn-on delay, and 96ns turn-off delay. This RoHS compliant component is lead-free.
PackageTO-247-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STW40N60M2 technical specifications.
General
Package/Case
TO-247-3
Continuous Drain Current (ID)
34A
Drain to Source Breakdown Voltage
650V
Drain to Source Resistance
88mR
Drain to Source Voltage (Vdss)
600V
Fall Time
11ns
Gate to Source Voltage (Vgs)
25V
Input Capacitance
2.5nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
250W
Mount
Through Hole
Number of Channels
1
Package Quantity
30
Packaging
Rail/Tube
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
88mR
RoHS Compliant
Yes
Series
MDmesh™ II Plus
Turn-Off Delay Time
96ns
Turn-On Delay Time
20.5ns
Weight
1.340411oz
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STW40N60M2 Datasheet
Download the complete datasheet for Stmicroelectronics STW40N60M2 to view detailed technical specifications.
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