N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 35A continuous drain current. This second-generation MDmesh™ II device offers a low 88mΩ drain-source on-resistance and 255W maximum power dissipation. Designed for through-hole mounting in a TO-247 package, it boasts fast switching speeds with a 25ns turn-on delay and 60ns fall time. Operating across a wide temperature range from -55°C to 150°C, this RoHS and REACH SVHC compliant component is ideal for high-power applications.
PackageTO-247
MountingThrough Hole
PolarityN-CHANNEL
Power255W
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Technical Specifications
Stmicroelectronics STW43NM60N technical specifications.
General
Package/Case
TO-247
Continuous Drain Current (ID)
35A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
88mR
Drain to Source Voltage (Vdss)
600V
Drain-source On Resistance-Max
88mR
Fall Time
60ns
Gate to Source Voltage (Vgs)
30V
Height
20.15mm
Input Capacitance
4.2nF
Lead Free
Lead Free
Length
15.75mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
255W
Mount
Through Hole
Number of Elements
1
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
255W
Radiation Hardening
No
Rds On Max
88mR
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Series
MDmesh™ II
Turn-Off Delay Time
130ns
Turn-On Delay Time
25ns
Width
5.15mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STW43NM60N Datasheet
Download the complete datasheet for Stmicroelectronics STW43NM60N to view detailed technical specifications.
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