N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 35A continuous drain current. This component offers a low 0.075 Ohm typical drain-source on-resistance and is housed in a TO-247 package for through-hole mounting. Key specifications include a 4V threshold voltage, 255W maximum power dissipation, and fast switching characteristics with a 50ns fall time. Designed with a fast diode, this RoHS compliant device operates within a temperature range of -55°C to 150°C.
PackageTO-247
MountingThrough Hole
PolarityN-CHANNEL
Power255W
Quick Jump:
Technical Specifications
Stmicroelectronics STW43NM60ND technical specifications.
General
Package/Case
TO-247
Continuous Drain Current (ID)
35A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
88mR
Drain to Source Voltage (Vdss)
600V
Drain-source On Resistance-Max
88mR
Fall Time
50ns
Gate to Source Voltage (Vgs)
25V
Height
20.15mm
Input Capacitance
4.3nF
Lead Free
Lead Free
Length
15.75mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
255W
Mount
Through Hole
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
255W
Radiation Hardening
No
Rds On Max
88mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
FDmesh™
Threshold Voltage
4V
Turn-Off Delay Time
120ns
Turn-On Delay Time
30ns
Width
5.15mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STW43NM60ND Datasheet
Download the complete datasheet for Stmicroelectronics STW43NM60ND to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
