N-CHANNEL Power MOSFET featuring 650V Drain to Source Voltage (Vdss) and 45A Continuous Drain Current (ID). Offers a low 110mR Drain-source On Resistance (Rds On Max) and 417W Max Power Dissipation. This through-hole TO-247 packaged MOSFET boasts a 3.8nF input capacitance and fast switching times with a 30ns turn-on delay and 23ns fall time. RoHS compliant and operating from -65°C to 150°C.
PackageTO-247
Current Rating45A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STW45NM60 technical specifications.
General
Package/Case
TO-247
Continuous Drain Current (ID)
45A
Current Rating
45A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
110mR
Drain to Source Voltage (Vdss)
650V
Drain-source On Resistance-Max
110mR
Fall Time
23ns
Gate to Source Voltage (Vgs)
30V
Height
20.15mm
Input Capacitance
3.8nF
Lead Free
Lead Free
Length
15.75mm
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
417W
Mount
Through Hole
Number of Elements
1
Package Quantity
30
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
417W
Radiation Hardening
No
Rds On Max
110mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
MDmesh™
Threshold Voltage
4V
Turn-On Delay Time
30ns
DC Rated Voltage
600V
Width
5.15mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STW45NM60 Datasheet
Download the complete datasheet for Stmicroelectronics STW45NM60 to view detailed technical specifications.
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