Automotive-grade N-channel power MOSFET featuring 600V drain-source breakdown voltage and 35A continuous drain current. This FDmesh™ II device offers a low 0.075 Ohm typical drain-source on-resistance and a fast diode. Packaged in a TO-247 through-hole mount, it operates from -55°C to 150°C with a maximum power dissipation of 225W. Key switching characteristics include a 30ns turn-on delay and 50ns fall time.
PackageTO-247
MountingThrough Hole
PolarityN-CHANNEL
Power255W
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Technical Specifications
Stmicroelectronics STW47NM60ND technical specifications.
General
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 35A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 88mR |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 88MR |
| Fall Time | 50ns |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 4.2nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 225W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 255W |
| Radiation Hardening | No |
| Rds On Max | 88mR |
| RoHS Compliant | Yes |
| Series | FDmesh™ II |
| Turn-Off Delay Time | 120ns |
| Turn-On Delay Time | 30ns |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STW47NM60ND Datasheet
Download the complete datasheet for Stmicroelectronics STW47NM60ND to view detailed technical specifications.
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