Automotive-grade N-channel power MOSFET featuring 600V drain-source breakdown voltage and 35A continuous drain current. This FDmesh™ II device offers a low 0.075 Ohm typical drain-source on-resistance and a fast diode. Packaged in a TO-247 through-hole mount, it operates from -55°C to 150°C with a maximum power dissipation of 225W. Key switching characteristics include a 30ns turn-on delay and 50ns fall time.
PackageTO-247
MountingThrough Hole
PolarityN-CHANNEL
Power255W
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Technical Specifications
Stmicroelectronics STW47NM60ND technical specifications.
General
Package/Case
TO-247
Continuous Drain Current (ID)
35A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
88mR
Drain to Source Voltage (Vdss)
600V
Drain-source On Resistance-Max
88MR
Fall Time
50ns
Gate to Source Voltage (Vgs)
25V
Input Capacitance
4.2nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
225W
Mount
Through Hole
Package Quantity
30
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
255W
Radiation Hardening
No
Rds On Max
88mR
RoHS Compliant
Yes
Series
FDmesh™ II
Turn-Off Delay Time
120ns
Turn-On Delay Time
30ns
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STW47NM60ND Datasheet
Download the complete datasheet for Stmicroelectronics STW47NM60ND to view detailed technical specifications.
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