N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 39A continuous drain current. Offers a low 0.055 Ohm typical drain-source on-resistance. Housed in a TO-247 package for through-hole mounting, this component operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 255W. Key switching characteristics include a 99ns turn-on delay and 25.5ns fall time.
PackageTO-247
MountingThrough Hole
PolarityN-CHANNEL
Power255W
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Technical Specifications
Stmicroelectronics STW48NM60N technical specifications.
General
Package/Case
TO-247
Continuous Drain Current (ID)
39A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
70mR
Drain to Source Voltage (Vdss)
600V
Drain-source On Resistance-Max
70MR
Fall Time
25.5ns
Gate to Source Voltage (Vgs)
25V
Height
20.15mm
Input Capacitance
4.285nF
Lead Free
Lead Free
Length
15.75mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
255W
Mount
Through Hole
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
255W
Radiation Hardening
No
Rds On Max
70mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
MDmesh™ II
Threshold Voltage
3.2V
Turn-Off Delay Time
214ns
Turn-On Delay Time
99ns
Width
5.15mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STW48NM60N Datasheet
Download the complete datasheet for Stmicroelectronics STW48NM60N to view detailed technical specifications.
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