N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 39A continuous drain current. Offers a low 0.055 Ohm typical drain-source on-resistance. Housed in a TO-247 package for through-hole mounting, this component operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 255W. Key switching characteristics include a 99ns turn-on delay and 25.5ns fall time.
PackageTO-247
MountingThrough Hole
PolarityN-CHANNEL
Power255W
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Technical Specifications
Stmicroelectronics STW48NM60N technical specifications.
General
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 39A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 70mR |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 70MR |
| Fall Time | 25.5ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 20.15mm |
| Input Capacitance | 4.285nF |
| Lead Free | Lead Free |
| Length | 15.75mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 255W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 255W |
| Radiation Hardening | No |
| Rds On Max | 70mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | MDmesh™ II |
| Threshold Voltage | 3.2V |
| Turn-Off Delay Time | 214ns |
| Turn-On Delay Time | 99ns |
| Width | 5.15mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STW48NM60N Datasheet
Download the complete datasheet for Stmicroelectronics STW48NM60N to view detailed technical specifications.
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