
N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 39A continuous drain current. Offers a low 0.055 Ohm typical drain-source on-resistance. Housed in a TO-247 package for through-hole mounting, this component operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 255W. Key switching characteristics include a 99ns turn-on delay and 25.5ns fall time.
Stmicroelectronics STW48NM60N technical specifications.
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